Organic light-emitting diode with doped layers

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United States of America Patent

PATENT NO 9496499
APP PUB NO 20080160341A1
SERIAL NO

11884837

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Abstract

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The invention concerns an organic light-emitting diode comprising a lower electrode (2) and an upper electrode (8), an electroluminescent organic layer (5), and at least one doped organic layer (3; 7) in contact with one of said electrodes. The invention is characterized in that the doping is carried out using an alkaline-earth element or lanthanide, and the diode is heat-treated at temperature preferably not less than 60° C. for more than one hour. The invention enables the lighting performance of the diode to be considerably improved.

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Patent Owner(s)

Patent OwnerAddress
COMMISSARIAT A L'ENERGIE ATOMIQUEPARIS FRA PARIS PARIS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bettinelli, Armand Coublevie, FR 29 95
Cina, Salvatore Grenoble, FR 15 76
Doyeux, Henri Beaucroissant, FR 5 17
Vaufrey, David Rennes, FR 27 164

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