Method for forming metal silicide layers
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United States of America Patent
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Nov 15, 2016
Grant Date -
Nov 13, 2014
app pub date -
Nov 23, 2012
filing date -
Nov 23, 2011
priority date (Note) -
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Abstract
The present invention is related to a method for forming a metal silicide layer on a textured silicon substrate surface. The method includes providing a metal layer on a textured silicon substrate and performing a pulsed laser annealing step providing at least one UV laser pulse with a laser fluence in the range between 0.1 J/cm2 and 1.5 J/cm2 and with a laser pulse duration in the range between 1 ns and 10 ms. Then, the method includes converting at least part of the metal layer into a metal silicide layer. In addition, the present invention is related to the use of such a method in a process for fabricating a photovoltaic cell, wherein the dielectric layer is a surface passivation layer, or wherein the dielectric layer is an antireflection coating.
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