Molybdenum barrier metal for SiC Schottky diode and process of manufacture

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United States of America Patent

PATENT NO 9496420
APP PUB NO 20080237608A1
SERIAL NO

11888452

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Abstract

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A method for fabricating a diode is disclosed. In one embodiment, the method includes forming a Schottky contact on an epitaxial layer of silicon carbide (SiC) and annealing the Schottky contact at a temperature in the range of 300° C. to 700° C. The Schottky contact is formed of a layer of molybdenum.

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Patent Owner(s)

  • VISHAY-SILICONIX

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Richieri, Giovanni Via San Pancrazio, IT 12 144

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