Non-volatile memory cell
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United States of America Patent
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Nov 15, 2016
Grant Date -
Jul 21, 2016
app pub date -
Mar 11, 2015
filing date -
Jan 15, 2015
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Abstract
A non-volatile memory cell includes a tunneling part; a coupling device; a read transistor; a first select transistor connected to the read transistor forming a read path with the read transistor in a read mode; an erase tunneling structure forming a tunneling ejection path in an erase mode; and a program tunneling structure forming a tunneling injection path in an program mode; wherein the read path is different from the tunneling ejection path and the tunneling injection path.
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