Semiconductor device

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United States of America Patent

PATENT NO 9496357
APP PUB NO 20140231905A1
SERIAL NO

14233835

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Abstract

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A trench MOSFET including: an epitaxial layer; a body region on the epitaxial layer, the body region and the epitaxial layer forming a first interface; a trench; a trench bottom oxide in the trench; and polysilicon in the trench, the trench bottom oxide and the polysilicon forming a second interface; where the first and second interfaces are substantially aligned or are at substantially the same level.

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Patent Owner(s)

Patent OwnerAddress
X-FAB SEMICONDUCTOR FOUNDRIES GMBHHAARBERGSTR 67 ERFURT 99097

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bong, Bui Ngo Sarawak, MY 1 1
Jeong, Yong Hun Sarawak, MY 1 1
Manso, Iliyana Sarawak, MY 1 1
Tay, Yen Thing Sarawak, MY 1 1

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