Semiconductor structure, semiconductor device, and method for producing semiconductor structure
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United States of America Patent
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Nov 15, 2016
Grant Date -
Jul 30, 2015
app pub date -
Jul 31, 2013
filing date -
Jul 31, 2012
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an α-type crystal structure, containing aluminum at impurity concentration of 1×1019 cm−3 or higher, and having thickness of 50 μm or greater. Further provided is a method for producing the semiconductor structure of the present invention which method includes at least epitaxial growth step of introducing silicon carbide source and aluminum source and epitaxially growing p-type silicon carbide single crystal layer over a base layer made of silicon carbide single crystal having α-type crystal structure, wherein the epitaxial growth step is performed at temperature conditions of from 1,500° C. to 1,700° C., and pressure conditions of from 5×103 Pa to 25×103 Pa.
First Claim
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International Classification(s)
- 2013 Application Filing Year
- H01L Class
- 22267 Applications Filed
- 20713 Patents Issued To-Date
- 93.03 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 9 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | May 15, 2028 |
