Resistive memory device implementing selective memory cell refresh
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United States of America Patent
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Nov 15, 2016
Grant Date -
Sep 29, 2016
app pub date -
May 24, 2016
filing date -
Jun 5, 2014
priority date (Note) -
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Abstract
A resistive memory device implements a selective refresh operation in which only memory cells with reduced sense margin are refreshed. In some embodiments, the selective refresh operation introduces a sense margin guardband so that a memory cell having programmed resistance that falls within the sense margin guardband will be refreshed during the read operation. The selective refresh operation is performed transparently at each read cycle of the memory cells and only memory cells with reduced sense margins are refreshed.
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