Technique for repairing an EUV photo-mask
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United States of America Patent
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Nov 15, 2016
Grant Date -
Sep 18, 2014
app pub date -
Mar 14, 2013
filing date -
Mar 14, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
During a calculation technique, a modification to a reflective photo-mask is calculated. In particular, using information specifying a defect associated with a recessed area on a top surface of the reflective photo-mask, the modification to the reflective photo-mask is calculated. For example, the calculation may involve an inverse optical calculation in which a difference between a pattern associated with the reflective photo-mask at an image plane in a photo-lithographic process and a reference pattern at the image plane in the photo-lithographic process is used to calculate the modification at an object plane in the photo-lithographic process. Note that the modification includes a negative feature in which one or more pairs of layers in a multilayer stack in the reflective photo-mask are removed using a subtractive fabrication process. Moreover, the modification is proximate to the recessed area.
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