HIGH-THROUGHPUT DEPOSITION OF A VOLTAGE-TUNABLE DIELECTRIC MATERIAL
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United States of America Patent
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Nov 8, 2016
Grant Date -
Dec 1, 2016
app pub date -
Jun 1, 2015
filing date -
Jun 1, 2015
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Abstract
High-throughput deposition of a voltage-tunable dielectric material onto a substrate comprising a conductive electrode is provided. Respective gradients in at least two grain size defining parameters of the deposition are simultaneously provided, the respective gradients occurring for a first time period thereby producing a smoothly changing columnar crystalline habit of the voltage-tunable dielectric material. When the first time period has ended, the deposition continues for a second time period where the grain size defining parameters are held constant. In particular, the smoothly changing columnar crystalline habit of the voltage-tunable dielectric material is intentionally distorted by simultaneously providing the respective gradients in the in at least two grain size defining parameters of the deposition.
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