Indium target and method for manufacturing same
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United States of America Patent
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Nov 8, 2016
Grant Date -
Jun 20, 2013
app pub date -
May 20, 2011
filing date -
Sep 1, 2010
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Abstract
Provided are an indium target capable of achieving a high deposition rate while suppressing the occurrence of arcing, and a method for manufacturing the indium target. In the process of solidification at the time of melting and casting an indium ingot, ultrasonic vibration is applied to molten indium liquid which is at least in a state immediately before solidification, and thereby, coarsening of the grain size is suppressed. Thus, an indium target is provided An indium target in which an overall average grain size is 10 mm or less; for the grains observed from a cross-section parallel to a thickness direction, a ratio of an average grain size in a direction parallel to the thickness direction with respect to an average grain size in a direction perpendicular to the thickness direction is 0.7 to 1.1; and pores with a pore size of 50 μm or greater exists at a density of 1 pore/cm3 or less.
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