Device and method for bias control of class A power RF amplifier
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United States of America Patent
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Nov 1, 2016
Grant Date -
Mar 5, 2015
app pub date -
Sep 4, 2014
filing date -
Sep 4, 2013
priority date (Note) -
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Abstract
A circuit and technique are provided to control bias setting to an FET based common source RF amplifier that can operate with large signals present. The circuit and technique described herein use a second FET in an identical circuit having the gate circuits connected in parallel and being sourced by the same drain voltage that serves as a reference to a first circuit bias setting. The drain current in a first FET will include both the bias and RF amplification current, whereas the second FET only carries the bias current. Because the devices and circuits are matched, the gate voltage variations will appear in both FETs thereby providing regulation of the drain current.
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