Magnetic memory device and method for forming the same
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United States of America Patent
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Nov 1, 2016
Grant Date -
Jan 21, 2016
app pub date -
Mar 12, 2015
filing date -
Jul 18, 2014
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Abstract
Provided are a magnetic memory device and a method of forming the same. The magnetic memory device includes a magnetic tunnel junction pattern located on a substrate and including magnetic patterns and a tunnel barrier pattern located between the magnetic patterns, and a first crystallinity conserving pattern located on the magnetic tunnel junction pattern and having a higher crystallization temperature than the magnetic patterns. The first crystallinity conserving pattern is amorphous.
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