Method of fabricating a GaN P-i-N diode using implantation
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United States of America Patent
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Nov 1, 2016
Grant Date -
Dec 17, 2015
app pub date -
Aug 24, 2015
filing date -
Oct 11, 2011
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Abstract
A III-nitride semiconductor device includes an active region for supporting current flow during forward-biased operation of the III-nitride semiconductor device. The active region includes a first III-nitride epitaxial material having a first conductivity type, and a second III-nitride epitaxial material having a second conductivity type. The III-nitride semiconductor device further includes an edge-termination region physically adjacent to the active region and including an implanted region comprising a portion of the first III-nitride epitaxial material. The implanted region of the first III-nitride epitaxial material has a reduced electrical conductivity in relation to portions of the first III-nitride epitaxial material adjacent to the implanted region
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