MIS transistors configured to be placed in programmed state and erased state
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United States of America Patent
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Nov 1, 2016
Grant Date -
N/A
app pub date -
Oct 6, 2015
filing date -
Oct 6, 2015
priority date (Note) -
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Abstract
A nonvolatile memory device includes a pair of MIS transistors one of which is placed in a programmed state by a first program operation utilizing a hot carrier effect to store one-bit data in the pair of MIS transistors, and a control unit configured to recall the one-bit data from the pair of MIS transistors in a recall operation, to cause an unprogrammed one of the MIS transistors to be placed in a programmed state by a second program operation utilizing a hot carrier effect in response to the one-bit data recalled from the pair of MIS transistors, and to erase the programmed states of both of the MIS transistors in an erase operation.
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