Blankmask and photomask
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United States of America Patent
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Nov 1, 2016
Grant Date -
Apr 2, 2015
app pub date -
Oct 1, 2014
filing date -
Oct 2, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
Provided is a photomask having a high-resolution pattern of a half-pitch of 32 nm or less (particularly, a half-pitch of 22 nm or less), which is manufactured by forming a blankmask in which a light-proof film and a hard film having a small thickness and high etch selectivity with respect to the light-proof film are formed on a transparent substrate. The photomask may have a high quality by adjusting a composition ratio of a metal, silicon (Si), and light elements that constitute the light-proof film to suppress damage to the pattern caused by an XeF2 gas in an electron-beam repair process.
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