Method of removing work-affected layer
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United States of America Patent
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Nov 1, 2016
Grant Date -
Nov 14, 2013
app pub date -
Mar 12, 2013
filing date -
May 9, 2012
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Abstract
A method of removing a work-affected layer formed on the worked surface of a TiAl-based alloy (base material) by machining work, without exerting any adverse effect on the base material. The method of removing the work-affected layer includes a step of dipping a TiAl-based alloy, having a work-affected layer formed on the surface thereof by machining, in an etchant containing predetermined concentrations of hydrofluoric acid and nitric acid. Within the etchant, the concentration of the hydrofluoric acid is not less than 5 g/L and not more than 56 g/L, and the concentration of the nitric acid is selected from within a range from not less than 50 g/L to not more than 260 g/L in accordance with a combination of the concentration of the hydrofluoric acid within the etchant and the etching treatment temperature.
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