Semiconductor light emitting device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
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United States of America Patent
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Oct 25, 2016
Grant Date -
Oct 30, 2014
app pub date -
Jul 8, 2014
filing date -
May 16, 2011
priority date (Note) -
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Abstract
According to one embodiment, a semiconductor light emitting device includes: first and second semiconductor layers, a light emitting part, and an In-containing layer. The first semiconductor layer is formed on a silicon substrate via a foundation layer. The light emitting part is provided on the first semiconductor layer, and includes barrier layers and a well layer provided between the barrier layers including Ga1-z1Inz1N (0
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