High-speed germanium on silicon avalanche photodiode
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United States of America Patent
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Oct 25, 2016
Grant Date -
Jun 16, 2016
app pub date -
Dec 7, 2015
filing date -
Dec 10, 2014
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Abstract
A high-speed germanium on silicon (Ge/Si) avalanche photodiode may include a substrate layer, a bottom contact layer disposed on the substrate layer, a buffer layer disposed on the bottom contact layer, an electric field control layer disposed on the buffer layer, an avalanche layer disposed on the electric field control layer, a charge layer disposed on the avalanche layer, an absorption layer disposed on the charge layer, and a top contact layer disposed on the absorption layer. The electric field contact layer may be configured to control an electric field in the avalanche layer.
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