SiC transient voltage suppressor
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United States of America Patent
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Oct 25, 2016
Issued Date -
N/A
app pub date -
Feb 13, 2015
filing date -
Feb 13, 2014
priority date (Note) -
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Abstract
A high power, high current Unidirectional Transient Voltage Suppressor, formed on SiC starting material is disclosed. The device is structured to avalanche uniformly across the entire central part (active area) such that very high currents can flow while the device is reversely biased. Forcing the device to avalanche uniformly across designated areas is achieved in different ways but consistently in concept, by creating high electric fields where the device is supposed to avalanche (namely the active area) and by relaxing the electric field across the edge of the structure (namely in the termination), which in all embodiments meets the conditions for an increased reliability under harsh environments.
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