Electrodeposited nano-twins copper layer and method of fabricating the same

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United States of America Patent

PATENT NO 9476140
APP PUB NO 20130122326A1
SERIAL NO

13679154

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Abstract

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An electrodeposited nano-twins copper layer, a method of fabricating the same, and a substrate comprising the same are disclosed. According to the present invention, at least 50% in volume of the electrodeposited nano-twins copper layer comprises plural grains adjacent to each other, wherein the said grains are made of stacked twins, the angle of the stacking directions of the nano-twins between one grain and the neighboring grain is between 0 to 20 degrees. The electrodeposited nano-twins copper layer of the present invention is highly reliable with excellent electro-migration resistance, hardness, and Young's modulus. Its manufacturing method is also fully compatible to semiconductor process.

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Patent Owner(s)

Patent OwnerAddress
NATIONAL CHIAO TUNG UNIVERSITYNO 1001 DASYUE RD HSINCHU CITY 300

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chih Hsinchu, TW 38 207
Liu, Taochi Hsinchu, TW 3 52
Tu, King-Ning Hsinchu, TW 27 393

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