Semiconductor heterostructure and method of fabrication thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
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Oct 18, 2016
Grant Date -
Sep 3, 2015
app pub date -
Oct 17, 2013
filing date -
Oct 17, 2012
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A III-V compound semiconductor heterostructure grown on a substrate is described. The heterostructure includes a first semiconductor layer, wherein the first layer semiconductor layer is a compound semiconductor layer with (III) (V), wherein (III) represents one or more group-III elements and (V) represents one or more group-V elements, an intermediate layer on the first semiconductor layer, wherein the intermediate layer is a compound semiconductor layer with (III)x>1(V)2-x, and wherein the intermediate layer has a thickness of 10 monolayers or below, and a second semiconductor layer, wherein the first layer semiconductor layer is a compound semiconductor layer with (III)1(V)1.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
BROLIS SENSOR TECHNOLOGY UAB | 14259 VILNIUS |
International Classification(s)

- 2013 Application Filing Year
- H01L Class
- 22267 Applications Filed
- 20713 Patents Issued To-Date
- 93.03 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Vizbaras, Augustinas | Vilnius, LT | 12 | 27 |
# of filed Patents : 12 Total Citations : 27 | |||
Vizbaras, Kristijonas | Vilnius, LT | 11 | 26 |
# of filed Patents : 11 Total Citations : 26 |
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Patent Citation Ranking
- 1 Citation Count
- H01L Class
- 13.47 % this patent is cited more than
- 9 Age
Forward Cite Landscape
- No Forward Cites to Display

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