Analysis circuit for field effect transistors having a displaceable gate structure
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United States of America Patent
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Oct 18, 2016
Grant Date -
Jun 19, 2014
app pub date -
Mar 12, 2012
filing date -
May 10, 2011
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Abstract
An analysis circuit for a field effect transistor having a displaceable gate structure, includes a measurement circuit coupled between a supply voltage connection of the analysis circuit and a drain connection of the field effect transistor and configured to output a measurement signal that is dependent on the current strength of a current flowing through the field effect transistor to a measurement connection.
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