High-efficiency AlGaInP light-emitting diode grown directly on transparent substrate and manufacturing method thereof
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United States of America Patent
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Oct 11, 2016
Grant Date -
Apr 2, 2015
app pub date -
Jul 18, 2014
filing date -
Oct 2, 2013
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Abstract
The present invention relates to a high-efficiency AlGaInP light-emitting diode directly grown on a transparent substrate and a method of manufacturing the same, and, more particularly, to a high-efficiency AlGaInP light-emitting diode grown on a sapphire substrate and a method of manufacturing the same. According to the present invention, an AlGaInP light-emitting diode is manufactured using an inexpensive sapphire substrate having high transmittance to ultraviolet rays, infrared rays and visible rays. The AlGaInP light-emitting diode according to the present invention can emit light with high efficiency because a lower substrate does not absorb light, and can be effectively manufactured because a process of removing a GaAs or a process of bonding a sapphire substrate is not conducted.
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