Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures
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United States of America Patent
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Oct 11, 2016
Grant Date -
Apr 16, 2015
app pub date -
Oct 16, 2013
filing date -
Oct 16, 2013
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Abstract
A semiconductor structure may include a first electrode over a substrate, a high-K dielectric material over the first electrode, and a second electrode over the high-K dielectric material, wherein at least one of the first electrode and the second electrode may include a material selected from the group consisting of a molybdenum nitride (MoaNb) material, a molybdenum oxynitride (MoOxNy) material, a molybdenum oxide (MoOx) material, and a molybdenum-based alloy material comprising molybdenum and nitrogen.
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