Memory with variable operation voltage and the adjusting method thereof

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United States of America Patent

PATENT NO 9465430
APP PUB NO 20140351609A1
SERIAL NO

14286432

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Abstract

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A memory with variable operation voltage is disclosed. The disclosed DRAM comprises a core memory module, a register, and a first voltage adjustment module. The core memory module operates with a first control voltage. The register is used for storing a plurality of control signals and selecting one among the control signals as a voltage control signal according to an input signal. The first voltage adjustment module is respectively electrically connected to the register, the core memory module, and an external voltage, so as to provide the first control voltage according to the voltage control signal and the external voltage.

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Patent Owner(s)

Patent OwnerAddress
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEHSINCHU
ETRON TECHNOLOGY INCNO 6 TECHNOLOGY ROAD 5 HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Rong, Bor-Doou Hsinchu, TW 32 123
Shiah, Chun Hsinchu, TW 72 617

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