Method and system for forming patterns with charged particle beam lithography
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United States of America Patent
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Oct 11, 2016
Grant Date -
Sep 17, 2015
app pub date -
May 18, 2015
filing date -
Jun 25, 2011
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Abstract
In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (βf). In some embodiments, the sensitivity to changes in βf is reduced by varying the charged particle surface dosage for a portion of the pattern. Methods for forming patterns on a surface, and for manufacturing an integrated circuit are also disclosed, in which pattern sensitivity to changes in βf is reduced.
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