Semiconductor substrate, eletronic device and method for manufacturing the same
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United States of America Patent
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Oct 4, 2016
Grant Date -
Dec 10, 2015
app pub date -
Aug 14, 2015
filing date -
Sep 27, 2011
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Abstract
A semiconductor substrate includes a vertical conductor and an insulating layer. The vertical conductor includes a metal/alloy component of a nanocomposite crystal structure and is filled in a vertical hole formed in the semiconductor substrate along its thickness direction. The insulating layer is formed around the vertical conductor in a ring shape and includes nm-sized silica particles and a nanocrystal or nanoamorphous silica filling up a space between the silica particles to provide a nanocomposite structure along with the silica particles.
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