Method of manufacturing semiconductor device and substrate processing apparatus
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United States of America Patent
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Oct 4, 2016
Grant Date -
Mar 10, 2016
app pub date -
Nov 12, 2015
filing date -
Mar 21, 2012
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Abstract
An object of the present invention is to form a good thin film while suppressing generation of foreign substances in a low temperature region. Provided is a method of manufacturing a semiconductor device, including: (a) forming a thin film containing at least a predetermined element and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: (a-1) supplying a source gas containing the predetermined element and a halogen element to the substrate in a process container; and (a-2) supplying a reaction gas composed of carbon, nitrogen, and hydrogen to the substrate in the process container; and (b) modifying byproduct adhered to an inside of the process container by supplying a nitriding gas into the process container after (a).
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