Image sensor pixels having p-channel source follower transistors and increased photodiode charge storage capacity
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United States of America Patent
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Sep 27, 2016
Grant Date -
May 26, 2016
app pub date -
Nov 25, 2014
filing date -
Nov 25, 2014
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Abstract
An image sensor may include image sensor pixels formed on a substrate. Each pixel may have a photodiode, a floating diffusion node, and charge transfer gate. The pixel may include an n-type doped well region and a p-channel MOS source follower transistor formed within the n-well region. An n-channel MOS reset transistor may be coupled between the floating diffusion region and a bias voltage column line and may have a drain terminal that overlaps with the n-well region. If desired, the pixel may include a p-channel JFET source follower transistor formed within the floating diffusion region on the substrate and an n-channel MOSFET reset transistor coupled to the floating diffusion. The polarities of the doping in the substrate on which the pixels are formed may be reversed. The pixel may be formed without row select transistors to increase photodiode area and charge storage capacity.
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