Tunnel homojunctions in group IV / group II-VI multijunction solar cells
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United States of America Patent
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Sep 27, 2016
Grant Date -
Jul 7, 2011
app pub date -
Jan 6, 2010
filing date -
Jan 6, 2010
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Abstract
A photovoltaic cell comprises a first subcell formed of a Group IV semiconductor material, a second subcell formed of a Group II-VI semiconductor material, and a tunnel homojunction interposed between the first and second subcells. A first side of the tunnel homojunction is formed by a first layer that is adjacent to a top surface of the first subcell. The first layer is of a first conductivity type and is comprised of a highly doped Group IV semiconductor material. The other side of the tunnel homojunction is formed by a second layer that adjoins the lower surface of the second subcell. The second layer is of a second conductivity type opposite the first conductivity type and also is comprised of a highly doped Group IV semiconductor material. The tunnel homojunction permits photoelectric series current to flow through the subcells.
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