Etch chemistries for metallization in electronic devices
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United States of America Patent
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Sep 27, 2016
Grant Date -
Sep 10, 2015
app pub date -
Mar 3, 2015
filing date -
Mar 7, 2014
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Abstract
In various embodiments, etchants featuring (i) mixtures of hydrochloric acid, methanesulfonic acid, and nitric acid, or (ii) mixtures of phosphoric acid, methanesulfonic acid, and nitric acid, are utilized to etch metallic bilayers while minimizing resulting etch discontinuities between the layers of the bilayer.
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