Molecular glass photoresists containing bisphenol a framework and method for preparing the same and use thereof
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United States of America Patent
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Sep 27, 2016
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Feb 5, 2015
app pub date -
May 18, 2012
filing date -
Mar 16, 2012
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Abstract
The present invention provides a class of molecular glass photoresist (I and II) comprising bisphenol A as a main structure and their preparation. The molecular glass photoresist is formulated with a photoacid generator, a cross-linking agent, a photoresist solvent, and other additives into a positive or negative photoresist. A photoresist with a uniform thickness is formed on a silicon wafer by spin-coating. The photoresist formulation can be used in modern lithography, such as 248 nm photolithography, 193 nm photolithography, extreme-ultraviolet (EUV) lithography, nanoimprint lithography, electron beam lithography, and particularly in the EUV-lithography technique.
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