Laser slicer of crystal ingots and a method of slicing gallium nitride ingots using a laser slicer

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United States of America Patent

PATENT NO 9452495
SERIAL NO

13543009

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Abstract

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The present invention discloses a new tool to slice crystal ingots by using laser beams. Ingot crystals of III-nitride such as GaN are immersed in alkali solutions and irradiated with scanned lines of laser beams to slice wafers out of the ingots. The method is expected to achieve approximately one order of magnitude smaller slicing loss with minimized slicing damage.

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Patent Owner(s)

Patent OwnerAddress
HAPPY SOAP LLC1133 BAL HARBOR BOULEVARD PUNTA GORDA FL 33955

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hashimoto, Tadao Santa Barbara, US 93 1210
Hoff, Sierra Solvang, US 8 61

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Patent Citation Ranking

  • 3 Citation Count
  • B23K Class
  • 20.71 % this patent is cited more than
  • 9 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges2447881022397211101 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7081 - 90100 +050100150200250300350400450500550600650700750800850

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