FORMING PUNCH-THROUGH STOPPER REGIONS IN FINFET DEVICES
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United States of America Patent
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Sep 20, 2016
Grant Date -
Oct 6, 2016
app pub date -
Apr 3, 2015
filing date -
Apr 3, 2015
priority date (Note) -
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status (Latency Note)
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Abstract
In forming a punch-through stopper region in a fin field effect transistor (finFET) device, a substrate may be etched to form a pair of trenches that define a fin structure. A portion of a first dose of ions may be implanted into the substrate through a bottom wall of each trench to form a pair of first dopant regions that at least partially extend under a channel region of the fin structure. The substrate at the bottom wall of each trench may be etched to increase a depth of each trench. Etching the substrate at the bottom wall of each trench may remove a portion of each first dopant region under each trench. A remaining portion of the pair of first dopant regions under the fin structure may at least partially define the punch-through stopper region of the finFET device.
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