Method for fracturing and forming a pattern using shaped beam charged particle beam lithography
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United States of America Patent
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Sep 20, 2016
Grant Date -
Apr 14, 2016
app pub date -
Dec 15, 2015
filing date -
Aug 26, 2009
priority date (Note) -
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Abstract
In the field of semiconductor production using charged particle beam lithography, a method and system for fracturing or mask data preparation or proximity effect correction is disclosed, where a non-circular target pattern to be formed on a surface is input. A plurality of charged particle beam shots for a multi-beam charged particle beam system is determined, where the plurality of shots will form a pattern on the surface, each charged particle beam shot being a multi-beam shot comprising a plurality of circular or nearly-circular beamlets. The pattern on the surface matches the target pattern within a predetermined tolerance. The determining is performed using a computing hardware device.
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