Light emitting diode structure
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United States of America Patent
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Sep 13, 2016
Grant Date -
Nov 26, 2015
app pub date -
Aug 3, 2015
filing date -
Jul 30, 2013
priority date (Note) -
In Force
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Abstract
A light emitting diode structure is provided. The light emitting diode structure includes a substrate, a light emitting multi-layer structure, a first current blocking layer, a first current spreading layer, a second current blocking layer and a second current spreading layer. The light emitting multi-layer structure is formed on the substrate by way of stacking. The first current blocking layer is formed on part of the light emitting multi-layer structure. The first current spreading layer covers the first current blocking layer and the light emitting multi-layer structure. The second current blocking layer is formed on part of the first current spreading layer. An orthogonal projection of the second current blocking layer is disposed in an orthogonal projection of the first current blocking layer. The second current spreading layer covers the second current blocking layer and the first current spreading layer.

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- 15 United States
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Patent Owner(s)
Patent Owner | Address | |
---|---|---|
LEXTAR ELECTRONICS CORPORATION | NO 21 LIXING RD HSINCHU SCIENCE PARK HSINCHU CITY 300094 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Chen, Bo-Yu | Hsinchu, TW | 22 | 34 |
Chou, Tzu-Hung | Zhongli, TW | 8 | 3 |
Tsou, Po-Hung | New Taipei, TW | 9 | 21 |
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