Method and device for measuring temperature of substrate in vacuum processing apparatus
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United States of America Patent
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Sep 13, 2016
Grant Date -
Nov 7, 2013
app pub date -
May 6, 2013
filing date -
May 7, 2012
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Abstract
A method and device for determining temperature of a substrate in a vacuum processing apparatus during a process of the substrate are disclosed, the substrate to be measured is placed on a susceptor in the vacuum processing apparatus for a manufacture process, and the method includes: selecting i wavelengths from radiance emitted from the susceptor through a substrate, where i is a natural number greater than 1; obtaining at least i pieces of radiance corresponding to the selected i wavelengths; and calculating the temperature of the substrate based on the i pieces of radiance and the i wavelengths, by using a mathematical equation: E(λi)=T(d)×M(λi,T), where E(λi) is the ith radiant quantity corresponding to the ith wavelength λi, T(d) is transmittance of the substrate, which is a function of thickness d of a film grown on the substrate, and M(λi,T) is blackbody radiation equation, which is a function of the ith wavelength λi and the substrate temperature T.
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