Nonvolatile memory device and method for testing nonvolatile memory device using variable resistance material
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United States of America Patent
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Sep 13, 2016
Grant Date -
May 7, 2015
app pub date -
Aug 19, 2014
filing date -
Nov 5, 2013
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Abstract
A method for testing a nonvolatile memory device includes: monitoring a first resistance dispersion and a second resistance dispersion of a nonvolatile memory device, determining a lower test bias level and an upper test bias level that are disposed on opposite sides of a reference bias level, calculating the number of first fail bits generated in the first resistance dispersion based on the lower test bias level and the number of second fail bits generated in the second resistance dispersion based on the upper test bias level, determining a selected reference bias level using the number of the first fail bits and the number of the second fail bits, and trimming the reference bias level to the selected bias level.
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