Semiconductor structure, method for forming the same and method for suppressing hot cluster
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United States of America Patent
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Sep 6, 2016
Grant Date -
Sep 4, 2014
app pub date -
Mar 3, 2014
filing date -
Mar 4, 2013
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Abstract
A semiconductor structure for suppressing hot clusters includes a substrate of a first dopant concentration, an epitaxial layer having a second dopant concentration smaller than the first dopant concentration and directly disposed on the substrate, a dopant gradient region disposed in the epitaxial layer and having a gradient decreasing from the substrate to the epitaxial layer, a shallow trench isolation disposed between a first element region and a second element region, and a shallow trench doping region surrounding the shallow trench isolation and near the dopant gradient region to suppress a hot cluster formed by the first element region to jeopardize the second element region.
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