Arrangement for manufacturing crystalline silicon ingots
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United States of America Patent
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Sep 6, 2016
Grant Date -
May 8, 2014
app pub date -
Apr 18, 2012
filing date -
Apr 19, 2011
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Abstract
The present invention relates to an arrangement for manufacturing crystalline silicon ingots by directional solidification, where the melt and carbonaceous structural parts of the crystallization furnace is protected from the fumes of the melt by applying a gas conduit which leads the fumes directly out of the directional solidification compartment of the furnace.
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