Cu-Ni-Si-based copper alloy plate having excellent deep drawing workability and method of manufacturing the same
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United States of America Patent
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Sep 6, 2016
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Jul 4, 2013
app pub date -
Jul 7, 2010
filing date -
Jul 7, 2010
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Abstract
The Cu—Ni—Si-based copper alloy plate contains 1.0 mass % to 3.0 mass % of Ni, and Si at a concentration of ⅙ to ¼ of the mass % concentration of Ni with a remainder of Cu and inevitable impurities, in which, when the average value of the aspect ratio (the minor axis of crystal grains/the major axis of crystal grains) of each crystal grains in an alloy structure is 0.4 to 0.6, the average value of GOS in the all crystal grains is 1.2° to 1.5°, and the ratio (Lσ/L) of the total special grain boundary length Lσ of special grain boundaries to the total grain boundary length L of crystal grain boundaries is 60% to 70%, the spring bending elastic limit becomes 450 N/mm2 to 600 N/mm2, the solder resistance to heat separation is favorable and deep drawing workability is excellent at 150° C. for 1000 hours.
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