Quantum dot optoelectronic device and methods therfor
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United States of America Patent
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Aug 30, 2016
Grant Date -
Jan 31, 2013
app pub date -
Jul 26, 2011
filing date -
Jul 26, 2011
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Abstract
An optoelectronic device and method for fabricating optoelectronic device, comprising: forming a quantum dot layer on a substrate including at least one electronically conductive layer, including a plurality of quantum dots which have organic capping layers; and removing organic capping layers from the quantum dots of the quantum dot layer by physically treating the quantum dot layer, the physical treatment including both thermal treatment and plasma processing.
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