β-Ga2O3-based single crystal substrate
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United States of America Patent
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Aug 30, 2016
Grant Date -
Dec 31, 2015
app pub date -
Feb 27, 2015
filing date -
Jun 30, 2014
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Abstract
A β-Ga2O3-based single crystal substrate includes an average dislocation density of less than 7.31×104 cm−2. The average dislocation density may be not more than 6.14×104 cm−2. The substrate may further include a main surface including a plane orientation of (−201), (101) or (001). The substrate may be free from any twinned crystal.
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