β-Ga2O3-based single crystal substrate
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United States of America Patent
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Aug 30, 2016
Grant Date -
Dec 31, 2015
app pub date -
Feb 27, 2015
filing date -
Jun 30, 2014
priority date (Note) -
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status (Latency Note)
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Abstract
A β-Ga2O3-based single crystal substrate includes an average dislocation density of less than 7.31×104 cm−2. The average dislocation density may be not more than 6.14×104 cm−2. The substrate may further include a main surface including a plane orientation of (−201), (101) or (001). The substrate may be free from any twinned crystal.
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International Classification(s)
- 2015 Application Filing Year
- H01L Class
- 25498 Applications Filed
- 22451 Patents Issued To-Date
- 88.06 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 2 Citation Count
- H01L Class
- 13.47 % this patent is cited more than
- 9 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Feb 29, 2028 |
