PBNZT ferroelectric film, sol-gel solution, film forming method and method for producing ferroelectric film
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 30, 2016
Issued Date -
N/A
app pub date -
Jul 23, 2010
filing date -
Jan 21, 2010
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
To provide a PBNZT ferroelectric film capable of preventing sufficiently oxygen ion deficiency. The PBNZT ferroelectric film according to an embodiment of the present invention is a ferroelectric film including a perovskite-structured ferroelectric substance represented by ABO3, wherein the perovskite-structured ferroelectric substance is a PZT-based ferroelectric substance containing Pb2+ as A-site ions and containing Zr4+ and Ti4+ as B-site ions, and the A-site contains Bi3+ as A-site compensation ions and the B-site contains Nb5+ as B-site compensation ions.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully