Indium-containing oxide film and preparing method thereof
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United States of America Patent
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Aug 30, 2016
Grant Date -
Nov 13, 2014
app pub date -
Jul 24, 2014
filing date -
Jan 27, 2012
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Abstract
The present invention relates to an indium oxide film formed by chemical vapor deposition or atomic layer deposition, or to an oxide film containing indium, and to a method for forming same. By chemical vapor deposition or atomic layer deposition, wherein an indium material that is a liquid at room temperature is used, an oxide film containing indium can be formed on a substrate having a large area, and particularly a substrate for manufacturing a display device.
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