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Abstract

In one embodiment, the present disclosure provides a deep ultraviolet laser generation device 1000 having a first laser source 100 at a first wavelength between 1.87 μm and 2.1 μm, a second laser source 200 at a second wavelength between 1.53 μm and 1.57 μm, a nonlinear wavelength conversion element 3 for generating near-infrared light 31 at a wavelength between 841 nm and 899 nm through a sum-frequency mixing (SFM) process, a nonlinear wavelength conversion element 4 for generating blue light 41 at a wavelength between 420 nm and 450 nm from the near-infrared light through a second harmonic generation (SHG) process, and a third nonlinear wavelength conversion element 5 for generating deep ultraviolet light 51 at a wavelength between 210 nm and 225 nm from the blue light, through another SHG process. The first laser source may be a thulium-doped laser source or a thulium-doped fiber source, and the second laser source may be a semiconductor laser source, an erbium-doped fiber source, or an erbium/ytterbium-doped fiber source.

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First Claim