P-I-N photodiode with dopant diffusion barrier layer

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United States of America Patent

PATENT NO 9425341
APP PUB NO 20140138789A1
SERIAL NO

14048379

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Abstract

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According to one aspect of the invention, there is provided a pin photodetector comprising a dopant diffusion barrier layer disposed within an active light absorbing region of the pin photodetector.

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Patent Owner(s)

Patent OwnerAddress
ADVANCED MICRO FOUNDRY PTE LTD11 SCIENCE PARK ROAD SINGAPORE 117385

International Classification(s)

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  • 2013 Application Filing Year
  • H01L Class
  • 22267 Applications Filed
  • 20713 Patents Issued To-Date
  • 93.03 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances2013201420152016201720182019202020212022202320240255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lim, Andy Eu-Jin Singapore, SG 1 11
Liow, Tsung-Yang Singapore, SG 9 62
Lo, Patrick Guo-Qiang Singapore, SG 12 117

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Patent Citation Ranking

  • 2 Citation Count
  • H01L Class
  • 13.47 % this patent is cited more than
  • 9 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges1792827316886303131891006776342711301 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +050010001500200025003000350040004500500055006000650070007500800085009000

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