Thin-film transistor and process for manufacture of the thin-film transistor
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United States of America Patent
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Aug 23, 2016
Grant Date -
Apr 23, 2015
app pub date -
Oct 16, 2014
filing date -
Oct 18, 2013
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Abstract
A thin-film transistor includes an oxidic semiconductor channel, a metallic or oxidic gate, drain and source contacts and at least one barrier layer positioned between the oxidic semiconductor channel and the drain and source contacts to inhibit an exchange of oxygen between the oxidic semiconductor channel and the drain and source contacts.
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