Light emitting diode (LED) die having strap layer and method of fabrication

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United States of America Patent

PATENT NO 9419195
APP PUB NO 20160027978A1
SERIAL NO

14341815

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Abstract

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A light emitting diode (LED) die includes a first-type semiconductor layer, a multiple quantum well (MQW) layer in electrical contact with the first-type semiconductor layer configured to emit electromagnetic radiation, and a second-type semiconductor layer in electrical contact with the multiple quantum well (MQW) layer. The light emitting diode (LED) die also includes a first pad in electrical contact with the first-type semiconductor layer, and a second pad in electrical contact with the second type semiconductor layer. The light emitting diode (LED) die also includes a strap layer having conductive straps and contact areas located in trenches in the first-type semiconductor layer.

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Patent Owner(s)

Patent OwnerAddress
SEMILEDS OPTOELECTRONICS CO LTD7F NO 13 KE JUNG RD CHU-NAN SITE HSINCHU SCIENCE PARK CHU-NAN MIAO-LI COUNTY 350

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shih, Yi-Feng Fu Chu-Nan, TW 1 1

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