Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structure
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United States of America Patent
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Aug 9, 2016
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May 14, 2015
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Mar 7, 2013
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Abstract
Impurity atoms of a first type are implanted through a gate and a thin gate dielectric into a channel region that has substantially only the first type of impurity atoms at a middle point of the channel region to increase the average dopant concentration of the first type of impurity atoms in the channel region to adjust the threshold voltage of a transistor.
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